PART |
Description |
Maker |
HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group SIEMENS AG
|
HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式)) RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20 1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
KM44C256A KM44C256A-10 KM44C256A-12 KM44C256A-8 |
CMF60, 12.7 kOhm, /- 1 Percent, 100 ppm RoHS Compliant: Yes 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
Q67100-Q2039 HYB314100BJ-50 HYB314100BJ-60 HYB3141 |
4M x 1 Bit FPM DRAM 3.3 V 60 ns 4M x 1 Bit FPM DRAM 3.3 V 50 ns -4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M x 1 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361 |
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http:// SIEMENS A G SIEMENS AG
|
HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
CDP1822 CDP1822CD CDP1822CDX CDP1822CE CDP1822CEX |
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, PDIP22 256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, CDIP22 From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|